Central Semiconductor – CTLSH01-30L and CFTVS5V0LC: Space Saving Energy Efficient Discrete Solutions for the Latest Wearable Consumer and Medical Products

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CTLSH01-30L

30V, 100mA Low VF Schottky Diode in the Ultra Miniature TLM2D3D6 Package

Central Semiconductor’s CTLSH01-30L is an energy efficient Schottky diode designed for applications where ultra small size, exceptionally low forward voltage and low reverse leakage are essential requirements. Packaged in the TLM2D3D6 leadless case, this device is ideal for the most demanding space constrained applications.

APPLICATIONS

  • DC-DC conversion
  • Reverse polarity protection
  • Flyback diode
  • Battery-power management
FEATURES

  • Forward current (IO = 100mA)
  • Low forward voltage drop (VF = 300mV at 10mA)
  • Low leakage current (IR = 0.8µA at 3.3V)

 

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Package Size and Comparison:
The new TLM2D3D6 utilizes 67% less board space than the SOD-882L.

 

Electrical Characteristics (TA = +25°C unless otherwise noted)

VRRM
(V) MAX
IO
(mA) MAX
VF
(mV) TYP
VF
(mV) MAX
at IFIR
(μA) TYP
IR
(μA) MAX
at VR
(V)
CT
(pF) TYP
3010070
300
95
370
5.0μA
10mA
0.82.03.37.0

Thermal Characteristics

PD
(mW) MAX
TJ
(°C) MAX
Tstg
(°C) MAX
ΘJA
(°C/W) MAX
7.0-65 to +125-65 to +1501,000

 

CFTVS5V0LC

5.0V, Transient Voltage Suppressor in the SOD-882L Package

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Central Semiconductor’s CFTVS5V0LC is an ultra low capacitance, low leakage, fast response TVS in the space saving SOD-882L surface mount package. This device is designed to protect ESD sensitive equipment connected to high speed data lines from damage. It is ideal for medical analyzers and wearable consumer products.

APPLICATIONS
• High speed data line protection
• User interface protection
• Charging/power port protection
• DC power rail clamping
FEATURES
• Ultra low capacitance
• Low leakage current
• 15kV ESD protection

 

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Package Size and Comparison:
The SOD-882L utilizes 96% less board space than the SMA

 

 

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Package Size and Comparison:
The SOD-882L has an 85% lower profile than the SMA

 

 

Maximum Ratings (TA = +25˚C)

PPK (8 x 20μs)VESD (Air)TJTstg
(W) MAX(kV) MAX(°C) MAX(°C) MAX
1215-55 to +125-55 to +150

 

Electrical Characteristics: (TA = +25˚C)

VF at IFVF at IFMaximum Reverse Stand-Off Voltage VRWMMinimum Breakdown Voltage VBR at ITTest Current ITMaximum Reverse Leakage Current IR at VRWMMaximum Clamping Voltage VC at IPPPeak Pulse Current IPPMaximum Capacitance at 0V Bias CJ
(V) MAX(mA)(V)(V)(mA)(μA)(V)(A)(pF)
1.0105.06.01.01.0121.00.9

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