ROHM – SCT2080KE and SCH2080KE: 2nd Generation High Voltage SiC MOSFETs

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ROHM offers an expanded lineup of high voltage SiC MOSFETs designed to deliver cost effective, breakthrough performance in inverters and converters in power conditioners and other devices through high voltage resistance, low ON resistance, high speed switching, and fast recovery characteristics

ROHM’s latest SiC MOSFETs series features dramatically lower switching loss – as much as 90% compared with silicon IGBTs – due to the absence of tail current and fast recovery characteristics of the body diode. The resulting 70-90ns turn ON/OFF times allow for switching frequencies in the hundreds of kilohertz (kHz) range, making it possible to reduce the size and weight of passives while enabling designers to achieve higher efficiency systems by implementing simpler, less expensive cooling systems, for example by using smaller, lighter passive air-cooled heat sinks instead of liquid or forced-air thermal management.

ROHM has also succeeded in overcoming problems associated with characteristics deterioration due to body diode degradation during reverse conduction (i.e. increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxide film by improving processes related to crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.

In addition to the standard lineup, ROHM offers the popular SCH2080KE – the industry’s first SiC MOSFET to co-package a discrete anti-parallel SiC Schottky barrier diode, featuring a forward voltage three times smaller than that of the body diode. This minimizes power loss (by 70% or more) while saving valuable board space, simplifying layout, and reducing BOM costs compared to equivalent discrete solutions.

The combination of excellent switching performance, low ON resistance, and high breakdown voltage make ROHM SiC MOSFETs ideal replacements for silicon power MOSFETs and IGBTs in a wide range of applications, including solar and 3-phase inverters, DC/DC converters, uninterruptible power supplies (UPS), and motor drives.

Typical System Block Diagrams

Typical System Block Diagrams

Electrical Characteristics

Electrical Characteristics

Lineup

Part No.VDSS (V)RDS(ON) (mΩ)ID Max. (A)PackageCo-Packaged Diode
SCT2080KE12008035TO-247
SCH2080KE 1200 80 35 TO-247YES
SCT2160KE 1200 160 22TO-247
SCT2280KE 1200 280 14 TO-247
SCT2450KE 1200 450 10 TO-247
SCT2120AF65012029TO-220AB

APPLICATIONS

  • DC/DC converters
  • Solar power inverters
  • 3-phase inverters
  • Power conditioners
  • Uninterruptible power supplies (UPS)
  • Inverters for EVs and HEVs
  • AC inverters
  • Industrial equipment
KEY FEATURES

  • High-speed switching (tON=70nsec, tOFF=98ns typ.)
  • Class leading low ON resistance with minimal temperature dependency
  • Significantly reduced power loss – no tail current results in 80% lower switching loss vs. silicon IGBTs
  • Prevents degradation caused by parasitic diode conduction
  • Co-packaged SiC SBD (SCH2080KE) reduces forward voltage along with the number of external parts, saving space

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