Vishay – SiC788 & SiC789: VRPower Integrated DrMOS Power Stages Deliver High Power Density

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The SiC788 and SiC789 are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 6 x 6mm MLP package, SiC788 and SiC788A enable voltage regulator designs to deliver up to 50A continuous current per phase. The internal power MOSFETs utilize Vishay’s state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses.

FEATURES

  • Thermally enhanced PowerPAK MLP66-40L package
  • Gen IV MOSFET technology with integrated Schottky diode
  • Delivers up to 60A continuous current
  • 95% peak efficiency
  • Up to 1.5MHz frequency operation
  • Power MOSFETs optimized for 12V input stage
  • 3.3V (A version)/5V PWM logic with tri-state and hold-off
  • SMOD# logic for light load efficiency improvement
  • Low PWM propagation delay (<20ns)
  • Thermal monitor flag
  • Faster enable/disable
  • Under-voltage lockout for VCIN

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