ON Semiconductor – Field Stop II IGBTs for Solar Inverters Offer Reduced Losses, Fast Switching

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ON Semiconductor’s new generation of insulated gate bipolar transistors (IGBTs) feature a robust and cost effective Field Stop II Trench construction offering improvements in both switching and conduction losses for inverter applications. Incorporated into the devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.

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FEATURES

  • Most devices are short circuit rated for robust system performance
  • Total gate charge has been reduced from the levels of the previous generation Field Stop 1 devices
  • Parts available in 600V, 650V and 1200V ratings
  • Current ratings from 15A to 75A
  • Positive temperature coefficient for reliable parallel operation
APPLICATIONS

  • Solar inverters
  • Uninterrupted power supply (UPS)
  • Welding

 
 
 
 
 
 

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