ROHM – SCH2080KE: 2nd Generation High Voltage Silicon Carbide (SiC) MOSFETs


Including the First Co-Packaged with a SiC Schottky Barrier Diode (SBD)

ROHM offers an expanded lineup of high voltage SiC MOSFETs designed to deliver cost effective, breakthrough performance in inverters and converters in power conditioners and other devices through high voltage resistance, low ON resistance, high speed switching, and fast recovery characteristics.

ROHM’s latest SiC MOSFETs series features dramatically lower switching loss – as much as 90% compared with silicon IGBTs – due to the absence of tail current and fast recovery characteristics of the body diode. The resulting 70-90ns turn ON/OFF times allow for switching frequencies in the hundreds of kilohertz (kHz) range, making it possible to reduce the size and weight of passives while enabling designers to achieve higher efficiency systems by implementing simpler, less expensive cooling systems, for example by using smaller, lighter passive air-cooled heat sinks instead of liquid or forced-air thermal management.

ROHM has also succeeded in overcoming problems associated with characteristics deterioration due to body diode degradation during reverse conduction (i.e. increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxided film by improving processes related to crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.

In addition to the standard lineup, ROHM offers the popular SCH2080KE – the industry’s first SiC MOSFET to co-package a discrete anti-parallel SiC Schottky barrier diode that features a forward voltage three times smaller than that of the body diode. This minimizes power loss (by 70% or more) while saving valuable board space, simplifying layout, and reducing BOM costs compared to equivalent
discrete solutions.

The combination of excellent switching performance, low ON resistance, and high breakdown voltage makes ROHM SiC MOSFETs ideal replacements for silicon power MOSFETs and IGBTs in a wide range of applications, including solar and 3-phase inverters, DC/DC converters, uninterruptible power supplies (UPS), and motor drives.


  • DC/DC converters
  • Solar power inverters
  • Power conditioners
  • Uninterruptible power supplies (UPS)
  • Inverters for EVs and HEVs
  • AC inverters
  • Industrial equipment

  • Brushed motor drive applications
  • BLDC motor drive applications
  • Battery-powered circuits
  • Half bridge and full bridge topologies
  • Synchronous rectifier applications
  • Resonant mode power supplies
  • Active OR-ing and redundant power switches
  • DC/DC and AC/DC converters
  • DC/AC inverters

Typical System Block Diagrams


Electrical Characteristics



Part No.VDSS (V)RDS (on) (mΩ)ID Max. (A)PackageCo-Packaged Diode