Vishay – 600 V E Series MOSFETs in PowerPAK® 8 x 8

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The new 600 V E Series features Kelvin connections to reduce gate drive inductance.

The construction of the PowerPAK 8 x 8 package allows one of the source pins to be arranged as a dedicated Kelvin source connection that separates the gate drive return path from the main current carrying source terminals. This prevents the L x di/dt voltage drop in the high current path from reducing the gate drive voltage that is applied to the E Series MOSFETs. This leads to faster switching and more noise immunity in power supply designs for telecom, server, computing, lighting, and industrial
applications.

FEATURES : SiHH26N60E, SiHH21N60E, SiHH14N60E

  • Large drain terminal for low thermal resistance
  • Kelvin source connection that can increase efficiency by improving the gate drive signal
  • Low profile surface mount power package
  • RoHS compliant, halogen-free and 100% lead-free
  • Provides a space-saving alternative to conventional TO-220 and TO-263 solutions

APPLICATIONS

  • Power factor correction
  • Flyback and two-switch forward converters for server and telecom power supplies
  • HID and fluorescent ballast lighting
  • Consumer and computing power adapters
  • Motor drives
  • Solar PV inverters
  • Induction heating
  • Welding equipment

SiHH11N60E

  • Low on-resistance down to 0.135Ω at 10V
  • Ultra low gate charge down to 31nC, and low gate charge times on-resistance
  • Key figure of merit (FOM) for MOSFETs used in power conversion applications
  • Extremely low conduction and switching losses to save energy

 
 
 
 
 
 
 
 
 
 
 
 

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