Diodes Inc. – DGD2103/04: Half Bridge Gate Drivers in SO-8


The DGD2103/4 is a high-voltage/high-speed gate driver family capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2103/4’s high side to switch to 600V in a bootstrap operation. The DGD2103/4 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction. The DGD2103/4 has a fixed internal dead time of 520ns.


  • Floating high side driver in bootstrap operation to 600V
  • 290mA source/600mA sink output current capability
  • Internal dead time of 520ns to protect MOSFETs
  • 3.3V logic input (HIN and LIN)
  • Under-voltage lockout for VCC (logic and low side supply)
  • Drives two N-channel MOSFETs or IGBTs in a half bridge configuration
  • Outputs tolerant to negative transients
  • 10V to 20V low side gate driver supply voltage
  • Schmitt triggered logic inputs
  • -40°C to +125°C temperature range