Diodes Incorporated – DGD2103M: Half Bridge Gate Driver Simplifies the Switching of MOSFETs and IGBTs

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The DGD2103M is a high voltage/high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation. The DGD2103M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical).

FEATURES
• Floating high side driver in bootstrap operation to 600V
• Outputs tolerant to negative transients
• 10V to 20V low side gate driver supply voltage
• Schmitt triggered logic inputs
• 290mA source/600mA sink output current capability
• Internal dead time of 420ns to protect MOSFETs
• 3.3V logic input
• Under-voltage lockout for VCC

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