The combination of having the lowest forward voltage (VF) with state-of-the-art forward surge current robustness enables designers to select a lower current rating diode while matching the expected converter’s efficiency level, increasing the affordability of high performing systems.
These diodes are ideal for use in high power applications such as solar converters, charging stations, OBC, power supplies, and motor drives.
ST’s new 1200V silicon-carbide (SiC) diodes are designed with an optimized trade-off between VF and IFSM. With state-of-the-art robustness, the surge capability for a 10ms pulse is in the range of 7 times the diode’s nominal current. The diode’s forward voltage drop (VF) is typically 1.35V at nominal current and room temperature, which is the best level available on the market. Moreover, the variation from typical to maximum on this V parameter is 10%, which is again today the best reproducible VF performance for 1200V SiC diodes.
Thanks to these characteristics, our customers can achieve worry-free the best level of efficiency in their applications, and ensure an enhanced production yield during manufacturing stages. For applications where solution cost matters, designers can also select a lower current rating of 1200V SiC for their applications. Indeed, the advantage of negligible switching losses will be preserved, and ST’s best-in-class VF /IFSM trade- off can be considered to reach the minimum expected efficiency level.
Thus, ST’s 1200V SiC diodes increase the afford-ability of high performing systems.
- Best VF on the market
- High robustness
- A complete range of devices from 2A up to 40A
- Unique D2PAK version on top of TO-220AC, TO-247, and DPAK HV
- Automotive-grade version AEC-Q101 qualified
- Solar converters
- EV/HEV charging stations
- On-board battery chargers for electric and hybrid vehicles
- Telecom power supplies
- Motor drives
- High-power servers