Silicon Carbide (SiC) opens up new degrees of freedom for designers to harness never before seen levels of efficiency and system flexibility. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristics.
Infineon’s unique 1200V SiC MOSFET adds additional advantages, superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4.5V and short-circuit robustness. This is the revolution you can rely on.
All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like full bridge, LLC and ZVS converters, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allows for system size reduction, power density increases and high lifetime reliability.
EasyDUAL™ 1B 1200V/11mΩ half bridge module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology
EasyDUAL™ 1B 1200 V/23mΩ half bridge module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology
- High current density
- Best in class switching and conduction losses
- Low inductive design
- Integrated NTC temperature sensor
- PressFIT contact technology
- RoHS-compliant modules
- Highest efficiency for reduced cooling effort
- Higher frequency operation
- Increased power density
- Optimized customer’s development cycle time and cost
|FF11MR12W1M1_B11||Half bridge with NTC||11mΩ||1200V||Easy1B PressFIT|
|FF23MR12W1M1_B11||Half bridge with NTC||23mΩ||1200V||Easy1B PressFIT|
Future Electronics is now authorized to sell Infineon’s high-power modules!