Infineon — 1EDN/2EDN EiceDRIVER™ and CoolMOS™ P7 MOSFET Families

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Rugged, Cool and Fast, 1- and 2- Channel Low-Side 4/8A and 5A Gate Driver ICs

1- and 2- channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. MOSFET Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.

Fast, Precise, Strong and Compatible

  • Highly efficient SMPS enabled by 5ns short slew rates and ±5ns and 10ns propagation delay precision for fast MOSFET and GaN switching
  • Industry standard packages and pinout ease system design upgrades
  • 1EDN: Separate source and sink outputs simplify the application design
  • 2EDN: Numerous deployment options due to two 5A channels; 1ns channel-to-channel accuracy to use two channels in parallel

The New Reference in Ruggedness and Low Power Dissipation

  • 4V and 8V Under Voltage Lock Out (UVLO) options for instant MOSFET protection during start-up and under abnormal conditions
  • Cool driver ICs from true rail-to-rail low impedance output stages
  • -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers or, in the case of the 2EDN, driving MOSFETs in TO-220 and TO-247 packages
  • 5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages and reduces bill-of-material

APPLICATIONS

  • PFC
  • Synchronous rectification
  • DC/DC converters
  • Telecoms
  • Power tools
  • Industrial SMPS
  • Motor control
  • Wireless charging
  • Servers
  • Solar

Power MOSFET with Optimized Balance of Ease-of-Use and Highest Energy Efficiency

The 600V CoolMOS P7 is the successor of the 600V CoolMOS P6 series, targeting a broad range of applications ranging from low power SMPS up to highest power levels.

The 600V CoolMOS P7 is Infineon’s most well-balanced CoolMOS technology in terms of combining ease-of-use (e.g. low ringing) with excellent efficiency performance and reasonable price.

600V CoolMOS P7 achieves up to 1.5% better efficiency and 4.2°C lower MOSFET temperature versus competitor offerings. Its gate charge Qg and Eoss are 30% to 60% lower compared to previous CoolMOS families and competition, which leads to reduced driving and switching losses that allow high efficiency in various power classes. Furthermore, the optimized RDS(on) enables smaller footprints and higher power density.

ProductPackage NameUVLOFeatures
2EDN Gate Driver*2EDN7524FPG-DSO-84VNon-inverting
2EDN Gate Driver*2EDN7523FPG-DSO-84VInverting
2EDN Gate Driver*2EDN7424FPG-DSO-84VNon-inverting
2EDN Gate Driver*2EDN8524FPG-DSO-88VNon-inverting
2EDN Gate Driver*2EDN8523FPG-DSO-88VInverting
2EDN Gate Driver*2EDN7524RPG-TSSOP-84VNon-inverting
2EDN Gate Driver*2EDN7523RPG-TSSOP-84VInverting
2EDN Gate Driver*2EDN7424RPG-TSSOP-84VNon-inverting
2EDN Gate Driver*2EDN8523RPG-TSSOP-88VInverting
2EDN Gate Driver*2EDN8524RPG-TSSOP-88VNon-inverting
2EDN Gate Driver*2EDN7524GPG-WSON-84VNon-inverting
2EDN Gate Driver*2EDN7523GPG-WSON-84VInverting
1EDN Gate Driver**1EDN7512BPG-SOT23-54V-
1EDN Gate Driver**1EDN7511BPG-SOT23-64V-
1EDN Gate Driver**1EDN8511BPG-SOT23-68V-
1EDN Gate Driver**1EDN7512GPG-WSON-64V-

* 2EDN Topology = Low side (dual) ** 1EDN Topology = Low side (single)

FEATURES

  • Outstanding commutation ruggedness
  • Optimized balance between efficiency and ease-of-use
  • Significant reduction of switching and conduction losses
  • Excellent ESD robustness >2kV (HBM) for all products
  • Better RDS(on) /package products compared to competition enabled by a low RDS(on) x A (below 1Ω x mm²)
  • Large portfolio with granular RDS(on) selection qualified for a variety of industrial and consumer grade applications

BENEFITS

  • Suitable for hard and soft switching (PFC and LLC)
  • Ease-of-use and fast design-in through low ringing tendency and usage across PFC and PWM stages
  • Simplified thermal management due to low switching and conduction losses
  • Higher manufacturing quality due to >2kV ESD protection
  • Increased power density solutions enabled by using products with smaller footprint
  • Suitable for a wide variety of applications and power ranges

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